The greater advantage of GaN is that it has an extremely robust structure that can withstand extremely high temperatures. NXP's GaN transistors can specify a maximum temperature of 250 °C, compared to 225 °C for Si LDMOS. In such a high temperature environment, packaging technology that can make full use of this feature is even more needed. Therefore, customers will be the beneficiaries of NXP’s 30 years of experience in the field of RF power products. Our industrial base can provide customers with excellent product reliability, cost and a highly confident supply chain, which can supply GaN. This is the only business. As we said, GaN has therefore become mainstream.

The first generation of NXP GaN products